Laser working method

ABSTRACT

An object to be processed is restrained from warping at the time of laser processing. A modified region M 2  is formed within a wafer  11 , and fractures a 2 , b 2  extending in directions parallel to the thickness direction of the wafer  11  and tilted with respect to a plane including lines  5  are generated from the modified region M 2 . A modified region M 3  is formed within the wafer  11 , and a fracture a 3  extending in a direction parallel to the thickness direction of the wafer  11  and tilted with respect to the plane including the lines  5  is generated from the modified region M 3  so as to connect with the fracture b 2 . That is, the fractures a 2 , a 3 , b 2  are generated so as to be connected together. Therefore, at the time of laser processing, the fractures cause both side parts holding the lines to cut  5  therebetween in the wafer  11  to mesh with each other, whereby internal stresses occurring in a direction parallel to the thickness direction of the wafer  11  and perpendicular to the surface including the lines  5  when the modified regions are formed can be reduced.

TECHNICAL FIELD

The present invention relates to a laser processing method for cutting aplanar object to be processed along a line to cut.

BACKGROUND ART

Known as a conventional laser processing method is one irradiating aplanar object to be processed with laser light while locating aconverging point within the object, so as to form a modified region tobecome a cutting start point within the object along a line to cut theobject (see, for example, Patent Document 1).

Patent Document 1: Japanese Patent Application Laid-Open No. 2005-129851DISCLOSURE OF THE INVENTION Problem to be Solved by the Invention

However, the following problem may occur at the time of laser processingin laser processing methods such as the one mentioned above, since themodified region is formed within the object. That is, when the modifiedregion is formed within the object, an internal stress may occur in adirection which is parallel to the thickness direction of the object andperpendicular to a plane including the line to cut, thereby warping theobject. The degree of warpage becomes remarkable in particular whenmaking microchips such as discrete devices or forming a plurality ofrows of modified regions for one line to cut. As a result, displacementsof surfaces of the object may deviate from trackable ranges of autofocusfunctions for controlling converging positions of laser light providedin laser processing apparatus, or the object may be cut unintentionally.

It is therefore an object of the present invention to provide a laserprocessing method which can restrain the object from warping at the timeof laser processing.

Means for Solving Problem

For achieving the above-mentioned object, the laser processing method inaccordance with the present invention is a laser processing method forirradiating a planar object to be processed with laser light whilelocating a converging point within the object, so as to form a modifiedregion to become a cutting start point within the object along a line tocut the object; the method including the steps of forming a firstmodified region within the object and generating from the first modifiedregion a first fracture extending in a direction parallel to a thicknessdirection of the object and tilted with respect to a plane including theline to cut, and forming a second modified region within the object andgenerating from the second modified region a second fracture extendingin a direction parallel to the thickness direction of the object andtilted with respect to the plane including the line to cut so as toconnect with the first fracture.

This laser processing method irradiates the object to be processed withlaser light while locating the converging point within the object, so asto form the first and second modified regions to become cutting startpoints within the object along the line to cut the object. Thisgenerates the first fracture extending from the first modified region ina direction parallel to the thickness direction of the object and tiltedwith respect to a plane including the line to cut and the secondfracture extending from the second modified region in a directionparallel to the thickness direction of the object and tilted withrespect to the plane including the line to cut, so that the first andsecond fractures connect with each other. That is, both side partsholding the line to cut therebetween in the object mesh with each other,thereby making it possible to reduce internal stresses occurring indirections parallel to the thickness direction of the object and tiltedwith respect to the plane including the line to cut when the modifiedregions are formed. As a result, the object can be restrained fromwarping at the time of laser processing.

Preferably, the method includes the step of irradiating the object withlaser light while locating a converging point within the object, so asto form a third modified region to become a cutting start point withinthe object along the line to cut, and generating from the third modifiedregion a third fracture extending in a direction parallel to thethickness direction of the object and tilted with respect to the planeincluding the line to cut, and the second fracture is generated from thesecond modified region so as to connect with the third fracture in thestep of forming the second modified region and generating the secondfracture.

In this case, at the time of laser processing, the third fractureextending in a direction parallel to the thickness direction of theobject and tilted with respect to the plane including the line to cut isgenerated from the third modified region, and the second and thirdfractures connect with each other. That is, at the time of laserprocessing, the first, second, and third fractures cause both side partsholding the line to cut therebetween in the object to mesh with eachother, thereby making it possible to further reduce internal stressesoccurring in directions parallel to the thickness direction of theobject and tilted with respect to the plane including the line to cutwhen the modified regions are formed. As a result, the object canfurther be restrained from warping at the time of laser processing.Here, the step of forming the first modified region and generating thefirst fracture and the step of forming the third modified region andgenerating the third fracture may be carried out in any order.

Preferably, the object is a crystal structure having a cleavage planealong a direction parallel to the thickness direction of the object andtilted with respect to the plane including the line to cut. Since thisobject is likely to break along the direction parallel to its thicknessdirection and tilted with respect to the plane including the line tocut, forming the modified regions can reliably generate fractures inthis direction.

There is a case where the object is equipped with a semiconductorsubstrate, while the modified region includes a molten processed region.

Preferably, the method further includes the step of cutting the objectalong the line to cut from the modified region acting as the cuttingstart region. This can accurately cut the object along the line to cut.

Effect of the Invention

The present invention can restrain the object from warping at the timeof laser processing.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view of an object to be processed during laserprocessing by the laser processing apparatus in accordance with anembodiment;

FIG. 2 is a sectional view of the object taken along the line II-II ofFIG. 1;

FIG. 3 is a plan view of the object after the laser processing by thelaser processing apparatus in accordance with the embodiment;

FIG. 4 is a sectional view of the object taken along the line IV-IV ofFIG. 3;

FIG. 5 is a sectional view of the object taken along the line V-V ofFIG. 3;

FIG. 6 is a plan view of the object cut by the laser processingapparatus in accordance with the embodiment;

FIG. 7 is a graph showing relationships between the field intensity andcrack spot size in the laser processing apparatus in accordance with theembodiment;

FIG. 8 is a sectional view of the object in a first step of the laserprocessing apparatus in accordance with the embodiment;

FIG. 9 is a sectional view of the object in a second step of the laserprocessing apparatus in accordance with the embodiment;

FIG. 10 is a sectional view of the object in a third step of the laserprocessing apparatus in accordance with the embodiment;

FIG. 11 is a sectional view of the object in a fourth step of the laserprocessing apparatus in accordance with the embodiment;

FIG. 12 is a view showing a photograph of a cut section in a part of asilicon wafer cut by the laser processing apparatus in accordance withthe embodiment;

FIG. 13 is a graph showing relationships between the laser lightwavelength and the transmittance within a silicon substrate in the laserprocessing apparatus in accordance with the embodiment;

FIG. 14 is a front view showing an object to be processed which issubjected to the laser processing method in accordance with a firstembodiment of the present invention;

FIG. 15 is a partial sectional view taken along the line XV-XV of FIG.14;

FIG. 16 is a view for explaining the laser processing method inaccordance with the first embodiment of the present invention;

FIG. 17 is a view for explaining an action of the laser processingmethod shown in FIG. 16;

FIG. 18 is a view showing the state of a cut section of the object cutby the laser processing method shown in FIG. 16;

FIG. 19 is a view for explaining another example of the laser processingmethod shown in FIG. 16;

FIG. 20 is a view for explaining the laser processing method inaccordance with a second embodiment of the present invention;

FIG. 21 is a view for explaining the laser processing method inaccordance with a third embodiment of the present invention; and

FIG. 22 is a view for explaining subsequent states of the laserprocessing method shown in FIG. 21.

EXPLANATIONS OF NUMERALS OR LETTERS

1, 50, 60 . . . object to be processed; 5 . . . line to cut; a1, a2, a3,a4, a5, a6, a8, a9, a10, b1, b2, b3, b4, b5, b6, b8, b9, b10 . . .fracture; M1, M2, M3, M5, M6, M8, M9, M10 . . . modified region; P . . .converging point

BEST MODES FOR CARRYING OUT THE INVENTION

In the following, preferred embodiments of the present invention will beexplained in detail with reference to the drawings. In the laserprocessing methods in accordance with the embodiments, a phenomenonknown as multiphoton absorption is used for forming a modified regionwithin an object to be processed. Therefore, to begin with, a laserprocessing method for forming a modified region by the multiphotonabsorption will be explained.

A material becomes transparent when its absorption bandgap E_(G) isgreater than photon energy hv. Consequently, a condition under whichabsorption occurs in the material is hv>E_(G). However, even whenoptically transparent, the material generates absorption under acondition of nhv>E_(G) (where n=2, 3, 4, . . . ) if the intensity oflaser light becomes very high. This phenomenon is known as multiphotonabsorption. In the case of pulsed waves, the intensity of laser light isdetermined by the peak power density (W/cm²) of laser light at itsconverging point. The multiphoton absorption occurs under a conditionwhere the peak power density is 1×10⁸ (W/cm²) or greater, for example.The peak power density is determined by (energy of laser light at theconverging point per pulse)/(beam spot cross-sectional area of laserlight x pulse width). In the case of continuous waves, the intensity oflaser light is determined by the field intensity (W/cm²) of laser lightat the converging point.

The principle of the laser processing method in accordance with anembodiment using such multiphoton absorption will be explained withreference to FIGS. 1 to 6. As shown in FIG. 1, on a front face 3 of awafer-like (planar) object to be processed 1, a line to cut 5 forcutting the object 1 exists. The line to cut 5 is a virtual lineextending straight. As shown in FIG. 2, the laser processing method inaccordance with this embodiment irradiates the object 1 with laser lightL while locating a converging point P therewithin under a conditiongenerating multiphoton absorption, so as to form a modified region 7.The converging point P is a position at which the laser light L isconverged. The line to cut 5 may be curved instead of being straight,and may be a line actually drawn on the object 1 without beingrestricted to the virtual line.

Then, the laser light L is relatively moved along the line to cut 5(i.e., in the direction of arrow A in FIG. 1), so as to shift theconverging point P along the line to cut 5. Consequently, as shown inFIGS. 3 to 5, the modified region 7 is formed along the line to cut 5within the object 1, and becomes a cutting start region 8. The cuttingstart region 8 refers to a region which becomes a start point forcutting (fracturing) when the object 1 is cut. The cutting start region8 may be made by forming the modified region 7 either continuously orintermittently.

In the laser processing method in accordance with this embodiment, thefront face 3 of the object 1 hardly absorbs the laser light L and thusdoes not melt.

Forming the cutting start region 8 within the object 1 makes it easierto generate fractures from the cutting start region 8 acting as a startpoint, whereby the object 1 can be cut with a relatively small force asshown in FIG. 6. Therefore, the object 1 can be cut with a highprecision without generating unnecessary fractures on the front face 3of the object 1.

There seem to be the following two ways of cutting the object 1 from thecutting start region 8 acting as a start point. One is where anartificial force is applied to the object 1 after the cutting startregion 8 is formed, so that the object 1 fractures from the cuttingstart region 8 acting as a start point, whereby the object 1 is cut.This is the cutting in the case where the object 1 has a largethickness, for example. Applying an artificial force refers to exertinga bending stress or shear stress on the object 1 along the cutting startregion 8, or generating a thermal stress by applying a temperaturedifference to the object 1, for example. The other is where the formingof the cutting start region 8 causes the object 1 to fracture naturallyin its cross-sectional direction (thickness direction) from the cuttingstart region 8 acting as a start point, thereby cutting the object 1.This becomes possible if the cutting start region 8 is formed by one rowof the modified region 7 when the object 1 has a small thickness, or ifthe cutting start region 8 is formed by a plurality of rows of themodified region 7 in the thickness direction when the object 1 has alarge thickness. Even in this naturally fracturing case, fractures donot extend onto the front face 3 at a portion corresponding to an areanot formed with the cutting start region 8 in the part to cut, so thatonly the portion corresponding to the area formed with the cutting startregion 8 can be cleaved, whereby cleavage can be controlled well. Such acleaving method with a favorable controllability is very effective,since the object 1 to be processed such as silicon wafer has recentlybeen apt to decrease its thickness.

The modified region formed by multiphoton absorption in the laserprocessing method in accordance with this embodiment encompasses thefollowing cases (1) to (3):

(1) Case where the modified region is a crack region including one crackor a plurality of cracks

An object to be processed (e.g., glass or a piezoelectric material madeof LiTaO₃) is irradiated with laser light while locating a convergingpoint therewithin under a condition with a field intensity of at least1×10⁸ (W/cm²) at the converging point and a pulse width of 1 μs or less.This magnitude of pulse width is a condition under which a crack regioncan be formed only within the object while generating multiphotonabsorption without causing unnecessary damages to the front face of theobject. This generates a phenomenon of optical damage by multiphotonabsorption within the object. This optical damage induces a thermaldistortion within the object, thereby forming a crack regiontherewithin. The upper limit of field intensity is 1×10¹² (W/cm²), forexample. The pulse width is preferably 1 ns to 200 ns, for example. Theforming of a crack region by multiphoton absorption is disclosed, forexample, in “Internal Marking of Glass Substrate with Solid-stateLaser”, Proceedings of the 45th Laser Materials Processing Conference(December, 1998), pp. 23-28.

The inventors determined the relationship between field intensity andcrack size by an experiment. The following are conditions of theexperiment.

(A) Object to be processed: Pyrex (registered trademark) glass (with athickness of 700 μm)

(B) Laser

-   -   Light source: semiconductor laser pumping Nd:YAG laser    -   Wavelength: 1064 nm    -   Laser light spot cross-sectional area: 3.14×10⁻⁸ cm²    -   Oscillation mode: Q-switched pulse    -   Repetition frequency: 100 kHz    -   Pulse width: 30 ns    -   Output: output <1 mJ/pulse    -   Laser light quality: TEM₀₀    -   Polarizing property: linear polarization

(C) Condenser lens

-   -   Transmittance at a laser light wavelength: 60%

(D) Moving rate of the mount table mounting the object: 100 mm/sec

The laser light quality of TEM₀₀ means that the convergingcharacteristic is so high that convergence to about the wavelength oflaser light is possible.

FIG. 7 is a graph showing the results of the above-mentioned experiment.The abscissa indicates the peak power density. Since the laser light ispulsed laser light, the field intensity is represented by the peak powerdensity. The ordinate indicates the size of a crack part (crack spot)formed within the object by one pulse of laser light. Crack spots gatherto yield a crack region. The crack spot size is the size of a partyielding the maximum length among forms of crack spots. Data representedby black circles in the graph refer to a case where the condenser lens(C) has a magnification of ×100 and a numerical aperture (NA) of 0.80.On the other hand, data represented by whitened circles in the graphrefer to a case where the condenser lens (C) has a magnification of ×50and a numerical aperture (NA) of 0.55. Crack spots are seen to occurwithin the object from when the peak power density is about 10¹¹ (W/cm²)and become greater as the peak power density increases.

A mechanism by which the object to be processed is cut by forming acrack region will now be explained with reference to FIGS. 8 to 11. Asshown in FIG. 8, the object 1 is irradiated with laser light L while theconverging point P is located within the object 1 under a conditionwhere multiphoton absorption occurs, so as to form a crack region 9therewithin along a line to cut. The crack region 9 is a regioncontaining one crack or a plurality of cracks. Thus formed crack region9 becomes a cutting start region. A crack further grows from the crackregion 9 acting as a start point (i.e., from the cutting start regionacting as a start point) as shown in FIG. 9, and reaches the front face3 and rear face 21 of the object 1 as shown in FIG. 10, whereby theobject 1 fractures and is consequently cut as shown in FIG. 11. Thecrack reaching the front face 3 and rear face 21 of the object 1 maygrow naturally or as a force is applied to the object 1.

(2) Case where the modified region is a molten processed region

An object to be processed (e.g., semiconductor material such as silicon)is irradiated with laser light while locating a converging point withinthe object under a condition with a field intensity of at least 1×10⁸(W/cm²) at the converging point and a pulse width of 1 μs or less. As aconsequence, the inside of the object is locally heated by multiphotonabsorption. This heating forms a molten processed region within theobject. The molten processed region encompasses regions once molten andthen re-solidified, regions just in a molten state, and regions in theprocess of being re-solidified from the molten state, and can also bereferred to as a region whose phase has changed or a region whosecrystal structure has changed. The molten processed region may also bereferred to as a region in which a certain structure changes to anotherstructure among monocrystal, amorphous, and polycrystal structures. Forexample, it means a region having changed from the monocrystal structureto the amorphous structure, a region having changed from the monocrystalstructure to the polycrystal structure, or a region having changed fromthe monocrystal structure to a structure containing amorphous andpolycrystal structures. When the object to be processed is of a siliconmonocrystal structure, the molten processed region is an amorphoussilicon structure, for example. The upper limit of field intensity is1×10¹² (W/cm²), for example. The pulse width is preferably 1 ns to 200ns, for example.

By an experiment, the inventors verified that a molten processed regionwas formed within a silicon wafer (semiconductor substrate). Thefollowing are conditions of the experiment.

(A) Object to be processed: silicon wafer (with a thickness of 350 μmand an outer diameter of 4 inches)

(B) Laser

-   -   Light source: semiconductor laser pumping Nd:YAG laser    -   Wavelength: 1064 nm    -   Laser light spot cross-sectional area: 3.14×10⁻⁸ cm²    -   Oscillation mode: Q-switched pulse    -   Repetition frequency: 100 kHz    -   Pulse width: 30 ns    -   Output: 20 μJ/pulse    -   Laser light quality: TEM₀₀    -   Polarizing property: linear polarization

(C) Condenser lens

-   -   Magnification: ×50    -   NA.: 0.55    -   Transmittance at a laser light wavelength: 60%

(D) Moving rate of the mount table mounting the object: 100 mm/sec

FIG. 12 is a view showing a photograph of a cross section of a part of asilicon wafer cut by laser processing under the conditions mentionedabove. A molten processed region 13 is formed within the silicon wafer11. The molten processed region 13 formed under the above-mentionedconditions has a size of about 100 μm in the thickness direction.

The fact that the molten processed region 13 is formed by multiphotonabsorption will now be explained. FIG. 13 is a graph showingrelationships between the laser light wavelength and the transmittancewithin the silicon substrate. Here, the respective reflected componentson the front and rear sides of the silicon substrate are eliminated, soas to show the internal transmittance alone. The respectiverelationships are shown in the cases where the thickness t of thesilicon substrate is 50 μm, 100 μm, 200 μm, 500 μm, and 1000 μm.

For example, at the Nd:YAG laser wavelength of 1064 nm, the laser lightappears to be transmitted through the silicon substrate by at least 80%when the silicon substrate has a thickness of 500 μm or less. Since thesilicon wafer 11 shown in FIG. 12 has a thickness of 350 μm, the moltenprocessed region 13 caused by multiphoton absorption is formed near thecenter of the silicon wafer 11, i.e., at a part distanced from the frontface by 175 μtm. The transmittance in this case is 90% or more withreference to a silicon wafer having a thickness of 200 μm, whereby thelaser light is absorbed only slightly within the silicon wafer 11 but issubstantially transmitted therethrough. This means that the moltenprocessed region 13 is formed within the silicon wafer 11 not by laserlight absorption within the silicon wafer 11 (i.e., not by usual heatingwith the laser light) but by multiphoton absorption. The forming of amolten processed region by multiphoton absorption is disclosed, forexample, in “Ultrashort Pulse Laser Microprocessing of Silicon”,Preprints of the National Meetings of Japan Welding Society, Vol. 66(April, 2000), pp. 72-73.

A fracture is generated in a silicon wafer from a cutting start regionformed by a molten processed region, acting as a start point, in across-sectional direction, and reaches the front and rear faces of thesilicon wafer, whereby the silicon wafer is cut. The fracture reachingthe front and rear faces of the silicon wafer may grow naturally or as aforce is applied to the silicon wafer. The fracture naturally growingfrom the cutting start region to the front and rear faces of the siliconwafer encompasses a case where the fracture grows from a state in whichthe molten processed region forming the cutting start region is moltenand a case where the fracture grows when the molten processed regionforming the cutting start region is re-solidified from the molten state.In either case, the molten processed region is formed only within thesilicon wafer, and thus is present only within the cut section aftercutting as shown in FIG. 12. When a cutting start region is thus formedwithin the object by a molten processed region, unnecessary fracturesdeviating from a cutting start region line are harder to occur at thetime of cleaving, whereby cleavage control becomes easier. Here, themolten processed region may be formed not only by multiphoton absorptionbut also by other absorption actions.

(3) Case where the modified region is a refractive index change region

An object to be processed (e.g., glass) is irradiated with laser lightwhile locating a converging point within the object under a conditionwith a field intensity of at least 1×10⁸ (W/cm²) at the converging pointand a pulse width of 1 ns or less. When multiphoton absorption isgenerated within the object with a very short pulse width, the energycaused by multiphoton absorption is not converted into thermal energy,whereby an eternal structure change such as ion valence change,crystallization, or orientation polarization is induced within theobject, thus forming a refractive index change region. The upper limitof field intensity is 1×10¹² (W/cm²), for example. The pulse width ispreferably 1 ns or less, for example, more preferably 1 ps or less. Theforming of a refractive index change region by multiphoton absorption isdisclosed, for example, in “Forming of Photoinduced Structure withinGlass by Femtosecond Laser Irradiation”, Proceedings of the 42nd LaserMaterials Processing Conference (November, 1997), pp. 105-111.

Though the cases (1) to (3) are explained in the foregoing as a modifiedregion formed by multiphoton absorption, a cutting start region may beformed as follows while taking account of the crystal structure of awafer-like object to be processed, its cleavage characteristic, and thelike, whereby the object can be cut with a favorable precision by asmaller force from the cutting start region acting as a start point.

That is, in the case of a substrate made of a monocrystal semiconductorhaving a diamond structure such as silicon, it will be preferred if acutting start region is formed in a direction extending along a (111)plane (first cleavage plane) or a (110) plane (second cleavage plane).In the case of a substrate made of a group III-V compound semiconductorof sphalerite structure such as GaAs, it will be preferred if a cuttingstart region is formed in a direction extending along a (110) plane. Inthe case of a substrate having a crystal structure of hexagonal systemsuch as sapphire (Al₂O₃), it will be preferred if a cutting start regionis formed in a direction extending along a (1120) plane (A plane) or a(1100) plane (M plane) while using a (0001) plane (C plane) as aprincipal plane.

When the substrate is formed with an orientation flat in a direction tobe formed with the above-mentioned cutting start region (e.g., adirection extending along a (111) plane in a monocrystal siliconsubstrate) or a direction orthogonal to the former direction, thecutting start region extending in the direction to be formed with thecutting start region can be formed easily and accurately with referenceto the orientation flat.

Preferred embodiments of the present invention will now be explained.

First Embodiment

As shown in FIGS. 14 and 15, an object to be processed 1 comprises asilicon wafer 11 having a diameter of 6 inches and a thickness of 132μm, and a functional device layer 16 which is formed on the front face11 a of the silicon wafer 11 a while including a plurality of functionaldevices 15. The silicon wafer 11 has such a crystal orientation thatfractures are easy to extend in a direction different from its thicknessdirection t (hereinafter simply referred to as “thickness direction”).Specifically, the silicon wafer 11 is a crystal structure having acleavage plane along a direction parallel to its thickness direction andtilted with respect to a plane including lines to cut 5, in which thefront face 11 a of the silicon wafer 11 is a (111) surface, for example.

A number of functional devices 15, examples of which includesemiconductor operating layers formed by crystal growth, light-receivingdevices such as photodiodes, light-emitting devices such as laserdiodes, and circuit devices formed as circuits, are formed like a matrixin directions parallel and perpendicular to an orientation flat 6 of thesilicon wafer 11. Such an object to be processed 1 is cut by laserprocessing along lines to cut 5 (see broken lines in FIG. 14) which areset like grids such as to pass between adjacent functional devices, soas to yield discrete devices and the like which are microchips.

An example of cutting the object 1 will now be explained. First, anexpandable tape, for example, is attached to the rear face 21 of theobject 1. Subsequently, the silicon wafer 11 is irradiated with laserlight while using the front face 3 of the silicon wafer 11 as a laserlight irradiation surface and locating a converging point within thesilicon wafer 11, so as to form a modified region along each line to cut5 (laser processing). Then, the expandable tape is expanded. As aconsequence, the object 1 is cut along the lines to cut 5 from themodified regions acting as cutting start points, whereby a plurality ofsemiconductor chips are separated from each other. The modified regionsmay include not only molten processed regions but also crack regions andthe like.

The above-mentioned laser processing method will now be explained inmore detail with reference to scanning along the line to cut 5 by way ofexample.

First, as shown in FIG. 16( a), the object 1 is irradiated with laserlight at a laser light output of 0.92 W while locating its convergingpoint within the silicon wafer 11 in the vicinity of the rear face 21,so as to form a modified region M1 at a position distanced by 4 μm to 32μm in the thickness direction from the rear face 21. Subsequently, theconverging point is scanned at a processing speed of 300 mm/sec, forexample, along the line to cut 5, so as to form one row of modifiedregion M1 within the silicon wafer 11. As a consequence, fractures a1,b1 extending in directions parallel to the thickness direction of thesilicon wafer 11 and tilted with respect to the plane including thelines to cut 5 are generated from the upper and lower ends of themodified region M1, respectively.

Here, the silicon wafer 11 is a crystal structure having such a cleavageplane as that mentioned above and thus is likely to break alongdirections parallel to its thickness direction and tilted with respectto the plane including the lines to cut 5. Therefore, the fractures a1,b1 favorably occur in these directions when forming the modified regionM1. Here, the fracture a1 extends in the first cleavage direction of thesilicon wafer 11, which is specifically a direction having an angle of54.7°. The fracture b1 extends in the second cleavage direction of thesilicon wafer 11, which is specifically a direction having an angle of19.5°.

Next, as shown in FIG. 16( b), the object 1 is irradiated with laserlight at a laser light output of 0.40 W while locating its convergingpoint within the silicon wafer 11 in the vicinity of the front face 11a, so as to form a modified region M2 at a position distanced by 16 μmto 34 μm in the thickness direction from the front face 11 a.Subsequently, the converging point is scanned at a processing speed of300 mm/sec, for example, along the line to cut 5, so as to form one rowof modified region M2 within the silicon wafer 11. As a consequence,fractures a2, b2 extending in the first and second cleavage directionsof the silicon wafer 11 are generated from the upper and lower ends ofthe modified region M2, respectively. Here, the modified region M2 isformed such that the fracture a2 extending from the upper end of themodified region M2 reaches the front face 3 of the silicon wafer 11,i.e., the fracture 2 is exposed (so as to yield a so-called half-cutstate) along the line to cut 5 in the front face 3. As a consequence,the object 1 can accurately be cut along the lines to cut 5 into aplurality of semiconductor chips by expanding the expandable tape, forexample.

Next, as shown in FIG. 16( c), the object 1 is irradiated with laserlight at a laser light output of 0.80 W while locating its convergingpoint between the modified regions M1 and M2 within the silicon wafer11, so as to form a modified region M3 at a position distanced by 59 μmto 69 μm in the thickness direction from the front face 11 a.Subsequently, the converging point is scanned at a processing speed of300 mm/sec, for example, along the line to cut 5, so as to form one rowof modified region M3 within the silicon wafer 11. As a consequence, afracture a3 extending in the first cleavage direction of the siliconwafer 11 is generated from the upper end of the modified region M3 so asto connect with the fracture b2 extending from the lower end of themodified region M2, and a fracture b3 extending in the second cleavagedirection of the silicon wafer 11 is generated from the lower end of themodified region M3 so as to connect with the fracture a1 extending fromthe upper end of the modified region M2. Though the modified region M2already formed between the front face 3 where laser light is incidentand the converging point of the laser light may scatter or absorb thelaser light and so forth when forming the modified region M3, thisembodiment reliably forms the modified region M3 within the siliconwafer 11 along the line to cut 5 as mentioned above.

As explained in the foregoing, while utilizing at least two cleavagedirections in the silicon wafer 11 by forming the modified regions M1,M2, M3, the fact that fractures are likely to extend in directions offractures which have already occurred is used for generating thefractures a3, b3 from the modified region M3 so that they connect withthe fractures a1, a2, b1, b2. Hence, fractures are induced in thecleavage directions in the silicon wafer 11, so as to form an irregularsurface along the fractures.

When the modified region M1 is taken as the first modified region, themodified regions M3 and M2 correspond to the second and third modifiedregions, respectively. In this case, the fractures a1, b1 correspond tothe first fracture, the fractures a3, b3 correspond to the secondfracture, and the fractures a2, b2 correspond to the third fracture.When the modified region M2 is taken as the first modified region, onthe other hand, the modified regions M3 and M1 correspond to the secondand third modified regions, respectively. In this case, the fracturesa2, b2 correspond to the first fracture, the fractures a3, b3 correspondto the second fracture, and the fractures a1, b1 correspond to the thirdfracture.

Here, when the object 1 is irradiated with laser light while locatingits converging point within the silicon wafer 11, so as to form amodified region therewithin, an internal stress may occur in a directionH parallel to the thickness direction of the silicon wafer 11 andperpendicular to a plane including lines to cut at the time of laserprocessing as shown in FIG. 17( a), thereby causing warpage in theobject 1. In the conventional laser processing method, as a consequence,the object 1 may be cut unintentionally when scanning the convergingpoint of laser light along the line to cut 5, for example, as shown inFIG. 17( b).

Therefore, as mentioned above, the laser processing method in accordancewith this embodiment irradiates the object 1 with laser light whilelocating the converging point within the silicon wafer 11, so as to formthe modified regions M1, M2, M3 to become cutting start points withinthe object along the lines to cut 5, whereby the fractures a1, a2, a3,b1, b2, b3 are generated in directions parallel to the thicknessdirection of the silicon wafer 11 and tilted with respect to the planeincluding the lines to cut 5 so as to be connected together.Consequently, as shown in FIG. 17( c), these fractures cause both sideparts holding the lines to cut 5 therebetween in the silicon wafer 11 tomesh with each other, thereby making it possible to reduce internalstresses occurring when the modified regions M1, M2, M3 are formed. Inother words, the fractures a1, a2, a3, b1, b2, b3 form an irregularsurface in the silicon wafer 11, while shear forces acting on thissurface can reduce the internal stresses. This can restrain the object 1from warping and prevent it from being cut unintentionally at the timeof laser processing. As a consequence, autofocus functions forcontrolling converging positions of laser light provided in laserprocessing apparatus can reliably track surfaces of the object 1,whereby the object 1 can accurately be laser-processed.

As mentioned above, the silicon wafer 11 is a crystal structure in whichthe crystal orientation of the front face 3 is in a (111) surface, sothat fractures are likely to extend in directions different from itsthickness direction, i.e., having cleavage directions different from thethickness direction. Therefore, when laser-processing such a crystalstructure, there is a case where the conventional laser processingmethod carries out scanning such that modified regions are overlaid oneach other in the thickness direction along one line to cut in order tocut the object 1 accurately regardless of its cleavage directions. Inthis case, however, the number of scans increases, while the cleavagedirections differ from cut sections, so that the cutting force forcutting the object 1 into a plurality of semiconductor chips becomesgreater, thereby limiting the size of chips which can be manufactured.

Further, when laser-processing such a crystal structure, there is a casewhere the conventional laser processing method forms a modified regionnear the front or rear face of the silicon wafer and cuts it by applyingan external force thereto. Though this can reduce the number of scans,two or more cleavage directions are not utilized, i.e., the object iscut by only one cleavage direction different from the thicknessdirection, whereby fractures may grow so much along the one cleavagedirection upon cutting, thus tilting cut sections greatly with respectto the thickness direction.

In this regard, when forming the modified regions M1, M2, M3 to becomecutting start points within the silicon wafer 11, the laser processingmethod in accordance with this embodiment utilizes at least two cleavagedirections in the silicon wafer 11, so as to generate the fractures a1,a2, a3, b1, b2, b3 in directions parallel to its thickness direction andtilted with respect to the plane including the lines to cut 5 such thatthey are connected together. This allows the cut sections to coincidewith the cleavage directions, so that the object 1 can be cut with arelatively small external force, while the cut sections can attain afavorable quality.

FIG. 18 is a sectional view showing the state of a cut section of theobject 1 cut by the laser processing method in accordance with thisembodiment. This embodiment can yield irregular cut sections whencutting the object 1. The height from the most recessed part to the mostprojected part in this cut section is 12 to 13 μm, which cansufficiently satisfy a standard value of 20 μm or less in typicaldiscrete devices, for example.

FIG. 19 shows another example of scan along a given line to cut 5 by thelaser processing method in accordance with this embodiment. This examplediffers from the above-mentioned one shown in FIG. 16 in that a fracturea4 extending in the first cleavage direction of the silicon wafer 11from the lower end of the modified region M2 is generated when formingthe latter, a fracture b4 extending in the second cleavage directionfrom the upper end of the modified region M3 is generated when formingthe latter, and the fractures a1, a2, a4, b1, b2, b4 are connectedtogether.

This example exhibits the same effects as those mentioned above in thatfractures are induced in the cleavage directions in the silicon wafer11, so as to form irregular surfaces along the fractures, whereby bothside parts holding the lines to cut 5 therebetween in the silicon wafer11 mesh with each other at the time of laser processing, so as torestrain the object 1 from warping and prevent the object 1 from beingcut unintentionally. Thus, the directions of fractures are not limitedto the example shown in FIG. 16, but may be any of the first and secondcleavage directions of the silicon wafer 11. The fractures may extend inother cleavage directions (i.e., directions which are different from thefirst and second cleavage directions while being parallel to thethickness direction of the silicon wafer 11 and tilted with respect tothe plane including the lines to cut 5) as a matter of course. The sameholds true for directions of fractures which will be explained later.

When the modified region M1 is taken as the first modified region, themodified regions M3 and M2 correspond to the second and third modifiedregions, respectively. In this case, the fractures a1, b1 correspond tothe first fracture, the fractures b3, b4 correspond to the secondfracture, and the fractures a2, a4 correspond to the third fracture.When the modified region M2 is taken as the first modified region, onthe other hand, the modified regions M3 and M1 correspond to the secondand third modified regions, respectively. In this case, the fracturesa2, a4 correspond to the first fracture, the fractures b3, b4 correspondto the second fracture, and the fractures a1, b1 correspond to the thirdfracture.

Second Embodiment

The laser processing method in accordance with the second embodimentemploys, as its object to be processed, an object to be processed 50equipped with a silicon wafer 51 which is the same as the silicon wafer11 shown in FIGS. 14 and 15 except that its thickness is 96 μm. Thislaser processing method differs from that of the first embodiment inthat the modified region M3 is not formed between the modified regionsM1 and M2 within the silicon wafer when forming the modified regionsalong lines to cut by irradiating the silicon wafer with laser lightwhile locating a converging point within the silicon wafer.

As shown in FIG. 20( a), a modified region M5 is formed within thesilicon wafer 51 in the vicinity of the rear face 51 b, and fractures a5and b5 extending in the first and second cleavage directions of thesilicon wafer 51 are generated from the upper and lower ends of themodified region M5, respectively. Subsequently, as shown in FIG. 20( b),a modified region M6 is formed within the silicon wafer 51 in thevicinity of the front face 51 a, a fracture a6 extending in the firstcleavage direction of the silicon wafer 51 is generated from the upperend of the modified region M6, and a fracture b6 extending in the secondcleavage direction of the silicon wafer 51 is generated from the lowerend of the modified region M6. This connects the fractures a5, a6, b5,b6 together, thereby forming irregular surfaces along these fractures.

The laser processing method in accordance with the second embodimentexhibits the same effects as those mentioned above in that both sideparts holding the lines to cut 5 therebetween in the silicon wafer 51mesh with each other at the time of laser processing, so as to restrainthe object 50 from warping and prevent the object 50 from being cutunintentionally.

The modified regions M5 and M6 correspond to the first and secondmodified regions, respectively. The fractures a5, b5 correspond to thefirst fracture, while the fractures a6, b6 correspond to the secondfracture.

Third Embodiment

The laser processing method in accordance with the third embodimentemploys, as its object to be processed, an object to be processed 60equipped with a silicon wafer 61 which is the same as the silicon wafer11 shown in FIGS. 14 and 15 except that its thickness is 169 μm. Thislaser processing method differs from that of the first embodiment inthat, when forming modified regions along lines to cut by irradiatingthe silicon wafer with laser light while locating a converging pointwithin the silicon wafer, the modified region M3 shown in FIG. 16( c) isformed between the modified regions M1 and M2 within the silicon wafer,and thereafter a modified region is further formed between the modifiedregions M2 and M3 within the silicon wafer.

That is, as shown in FIG. 21( a), a modified region M7 is formed withinthe silicon wafer 61 in the vicinity of the rear face 61 b, andfractures a7 and b7 extending in the first and second cleavagedirections of the silicon wafer 61 are generated from the upper andlower ends of the modified regions M7, respectively. Subsequently, asshown in FIG. 21( b), a modified region M8 is formed within the siliconwafer 61 in the vicinity of the front face 61 a, and fractures a8 and b8extending in the first and second cleavage directions of the siliconwafer 61 are generated from the upper and lower ends of the modifiedregions M8, respectively.

Next, as shown in FIG. 21( c), a modified region M9 is formed betweenthe modified regions M7 and M8 on the modified region M7 side within thesilicon wafer 61, a fracture a9 extending in the first cleavagedirection of the wafer 61 is generated from the upper end of themodified region M9, and a fracture b9 extending in the second cleavagedirection of the wafer 61 is generated from the lower end of themodified region M9.

Subsequently, as shown in FIG. 21( d), a modified region M10 is formedbetween the modified regions M7 and M8 on the modified region M8 side,i.e., between the modified regions M8 and M9, within the silicon wafer61, a fracture a 10 extending in the first cleavage direction of thesilicon wafer 61 is generated from the upper end of the modified regionM10 so as to connect with the fracture b8 extending from the lower endof the modified region M8, and a fracture b10 extending in the secondcleavage direction of the silicon wafer 61 is generated from the lowerend of the modified region M10 so as to connect with the fracture a9extending from the upper end of the modified region M9. The foregoingconnects the fractures a7, a8, a9, a10, b7, b8, b9, b10 together,thereby forming irregular surfaces along these fractures.

Therefore, in the laser processing method in accordance with the thirdembodiment, both side parts holding the lines to cut 5 therebetween inthe silicon wafer 61 can mesh with each other and reduce internalstresses occurring when the modified regions M7, M8, M9, M10 are formed.Also, in this embodiment, areas where both side parts holding the linesto cut in the silicon wafer mesh with each other are wider than those inthe earlier embodiments, whereby the internal stresses are furtherlowered. This further restrains the object 60 from warping and furtherprevents the object 60 from being cut unintentionally at the time oflaser processing.

When the modified region M8 is taken as the first modified region, themodified regions M10 and M9 correspond to the second and third modifiedregions, respectively. In this case, the fractures a8, b8 correspond tothe first fracture, the fractures a10, b10 correspond to the secondfracture, and the fractures a9, b9 correspond to the third fracture.When the modified region M9 is taken as the first modified region, onthe other hand, the modified regions M10 and M8 correspond to the secondand third modified regions, respectively. In this case, the fracturesa9, b9 correspond to the first fracture, the fractures a10, b10correspond to the second fracture, and the fractures a8, b8 correspondto the third fracture.

Though preferred embodiments of the present invention are explained inthe foregoing, the present invention is not limited thereto. Forexample, though silicon wafers whose front face is a (111) surface areused as objects to be processed in the above-mentioned embodiments, anywafer having a cleavage plane in a direction different from thethickness direction is sufficient. When generating a fracture in adirection parallel to the thickness direction and tilted with respect tothe surface including the lines to cut, it is not necessary for thesilicon wafers to have a cleavage plane in a direction different fromthe thickness direction.

Semiconductor compound materials such as gallium arsenide, piezoelectricmaterials, and crystalline materials such as sapphire, for example, maybe used instead of the silicon wafers.

INDUSTRIAL APPLICABILITY

The present invention can restrain the object to be processed fromwarping at the time of laser processing.

1-6. (canceled)
 7. A method for manufacturing a microchip by irradiatingan object to be processed, which made of crystalline material andincluding a plurality of functional devices, with laser light whilelocating a converging point of the laser light within the object, so asto form a modified region serving as a cutting start point within theobject along a cutting line, the method comprising; forming a firstmodified region within the object and generating a first fracture insideof the object from the first modified region, the first fractureextending in a direction tilted with respect to a plane extending in thethickness direction and cutting line; forming a second modified regionwithin the object and generating a second fracture inside of the objectfrom the second modified region, the second fracture extending in adirection tilted with respect to the plane so as to connect with thesecond fracture with the first fracture; and cutting the object alongthe cutting line from the first and second modified regions by usingeach of the first and second modified regions as a cutting start regionto thereby form an irregular cut section along the first and secondfractures as viewed from a side of the object in a direction of thecutting line.
 8. A method for manufacturing a microchip according toclaim 7, further including the step of irradiating the object with laserlight while locating a converging point of the laser light within theobject, so as to form a third modified region serving as a cutting startpoint within the object along the cutting line, and generating from thethird modified region a third fracture extending in a direction tiltedwith respect to the plane, wherein the second fracture is generated fromthe second modified region so as to connect with the third fracture inthe step of forming the second modified region and generating the secondfracture.
 9. A method for manufacturing a microchip according to claim7, wherein the object comprises a crystal structure having a cleavageplane along a direction tilted with respect to the plane.
 10. A methodfor manufacturing a microchip according to claim 8, wherein the objectcomprises crystal structure having a cleavage plane along a directiontilted with respect to the plane.
 11. A method for manufacturing amicrochip according to claim 7, wherein the object is equipped with asemiconductor substrate, and wherein the modified region includes amolten processed region.